HMC739LP4 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-16, 23.8 - 26.8 GHz

HMC739LP4 / 739LP4E
v03.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 23.8 - 26.8 GHz
Typical Applications
The HMC739LP4(E) is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios / LMDS
• VSAT
Features
Pout: +8 dBm
Phase Noise: -93 dBc/Hz @ 100 kHz Typ.
No External Resonator Needed
24 Lead 4x4mm SMT Package: 16mm²
Functional Diagram
8
General Description
The HMC739LP4(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO. The
HMC739LP4(E) integrates a resonator, negative
resistance device, varactor diode and divide-by-16
prescaler. The VCO’s phase noise performance is
excellent over temperature, shock, and process due
to the oscillator’s monolithic structure. Power output is
+8 dBm typical from a 5V supply voltage. The voltage
controlled oscillator is packaged in a low cost leadless
QFN 4x4 mm surface mount package
Electrical Specifications, T_A = +25° C, Vcc(RF), Vcc(DIG) = +5V
Frequency Range
Power Output
Parameter
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Min.
Fo
Fo/2
RF OUT
3
RF OUT/2
-3
RF OUT/16
-7
Vtune
1
Icc (RF), Icc (DIG)
160
Typ.
23.8 - 26.8
-93
200
3
1/2
-20
3/2
-30
30
-65
4
Max.
14
5
-1
13
220
10
Units
GHz
dBm
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]