HMC734LP5_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – MMIC VCO w/ DIVIDE-BY-4 8.6 - 10.2 GHz

v03.0609
Typical Applications
The HMC734LP5(E) is ideal for:
• Point-to-Point/Multi-Point Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use
Functional Diagram
8
HMC734LP5 / 734LP5E
MMIC VCO w/ DIVIDE-BY-4
8.6 - 10.2 GHz
Features
Dual Output: Fo = 8.6 - 10.2 GHz
Fo/4 = 2.15 - 2.55 GHz
Pout: +18 dBm
Phase Noise: -100 dBc/Hz @ 100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
General Description
The HMC734LP5(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO. The
HMC734LP5(E) integrates a resonator, negative resis-
tance device, varactor diode and features a divide-by-4
frequency output. The VCO’s phase noise perfor-
mance is excellent over temperature, shock, and pro-
cess due to the oscillator’s monolithic structure. Power
output is +18 dBm typical from a +5V supply voltage.
The prescaler function can be disabled to conserve
current if not required. The voltage controlled oscilla-
tor is packaged in a leadless QFN 5x5 mm surface
mount package, and requires no external matching
components.
Electrical Specifications, T_A = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Frequency Range
Parameter
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss (RFOUT)
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Min.
Fo
Fo/4
RFOUT 15
RFOUT/4
-8
Vtune
1
Icc(Dig) + Icc(Amp) + Icc(RF) 180
1/2
2nd
3rd
Typ.
8.6 - 10.2
2.15 - 2.55
-100
218
8
66
15
30
38
30
1.1
Max.
22
-1
13
240
10
Units
GHz
GHz
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]