English
Language : 

HMC594LC3B_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
v02.0210
7
Typical Applications
The HMC594LC3B is ideal for:
• Fixed Microwave
• Point-to-Multi-Point Radios
• Test & Measurement Equipment
• Radar & Sensors
• Military & Space
Functional Diagram
HMC594LC3B
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Features
Gain Flatness: ±0.2 dB
Noise Figure: 3 dB
Gain: 10 dB
Output IP3: +36 dBm
DC Supply: +5V @ 95mA / +6V @ 100 mA
50 Ohm Matched Input/Output
RoHS Compliant 3x3 mm SMT package
General Description
The HMC594LC3B is a GaAs PHEMT MMIC Low
Noise Amplifier (LNA) which operates from 2 to 4
GHz. The HMC594LC3B features extremely flat
performance characteristics including 10 dB of small
signal gain, 3 dB of noise figure and output IP3 of
+36 dBm across the operating band. This high linearity
LNA is ideal for test & measurement equipment
and military assemblies due to its compact size,
consistent output power and DC blocked RF I/O’s.
The HMC594LC3B is also available in chip form as
the HMC594.
Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 95 mA, Vdd = +6V, Idd = 100mA*
Parameter
Min.
Typ.
Frequency Range
2-4
Gain
7
10
Gain Variation Over Temperature
0.015
Noise Figure
3
Input Return Loss
15
Output Return Loss
17
Output Power for 1 dB
Compression (P1dB)
18
21
Saturated Output Power (Psat)
22
Output Third Order Intercept (IP3)
36
Supply Current (Idd)
100
*Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA typical for 6V or Idd = 95mA typical for 5V.
Max.
4
130
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
7 - 196
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com