HMC455LP3_06 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz

HMC455LP3 / 455LP3E
v02.0605
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
5
Typical Applications
This amplifier is ideal for high linearity applications:
• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & WCDMA
• PHS
Features
Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3x3 mm QFN SMT Package
Functional Diagram
General Description
The HMC455LP3 & HMC455LP3E are high output
IP3 GaAs InGaP Heterojunction Bipolar Transistor
(HBT) ½ watt MMIC amplifiers operating between
1.7 and 2.5 GHz. Utilizing a minimum number of
external components the amplifier provides 13 dB of
gain and +28 dBm of saturated power at 56% PAE
from a single +5 Vdc supply voltage. The high output
IP3 of +42 dBm coupled with the low VSWR of 1.4:1
make the HMC455LP3 & HMC455LP3E ideal driver
amplifiers for PCS/3G wireless infrastructures. A low
cost, leadless 3x3 mm QFN surface mount package
(LP3) houses the linear amplifier. The LP3 provides
an exposed base for excellent RF and thermal
performance.
Electrical Specifications, T_A = +25° C, Vs= +5V
Parameter
Frequency Range
Gain
Min. Typ. Max.
1.7 - 1.9
11.5 13.5
Min.
Typ. Max. Min. Typ. Max.
1.9 - 2.2
2.2 - 2.5
10.5
13
9
11.5
Gain Variation Over Temperature
0.012 0.02
0.012 0.02
0.012 0.02
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
13
10
24
27
28.5
37
40
7
150
15
18
24.5
27.5
28
39
42
6
150
10
15
23
26
27
37
40
6
150
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
5 - 352
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com