HMC435MS8G_10 Datasheet, PDF (1/4 Pages) Hittite Microwave Corporation – SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz

HMC435MS8G / 435MS8GE
v05.0110
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Typical Applications
The HMC435MS8G(E) is ideal for:
• Basestations & Repeaters
• Cellular/3G and WiMAX/4G
• Infrastructure and Access Points
• CATV/CMTS
• Test Instrumentation
Functional Diagram
11
Features
High Isolation: 60 dB @ 1 GHz
50 dB @ 2 GHz
Positive Control: 0/+5V
Input IP3: 51 dBm
Non-Reflective Design
Ultra Small MSOP-86 Package: 14.8 mm²
General Description
The HMC435MS8G(E) is a non-reflective DC to
4 GHz GaAs MESFET SPDT switch in a low cost 8
lead MSOP8G surface mount package with exposed
ground paddle. The switch is ideal for cellular/3G
and WiMAX/4G applications yielding up to 60 dB
isolation, low 0.8 dB insertion loss and +50 dBm
input IP3. Power handling is excellent up through the
3.8 GHz WiMAX band with the switch offering a P1dB
compression of +31 dBm. On-chip circuitry allows
positive voltage control of 0/+5 Volts at very low DC
currents.
Electrical Specifications, T_A = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Insertion Loss
Parameter
Isolation (RFC to RF1/RF2)
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
Frequency
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
0.5 - 4.0 GHz
0.5 - 4.0 GHz
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
DC - 4.0 GHz
Min.
Typ.
0.8
1.2
1.5
56
60
46
50
43
47
37
41
30
35
15
20
13
17
11
15
16
21
27
31
48
51
45
48
41
45
40
60
Max.
1.0
1.5
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
11 - 122
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com