HMC414MS8G_09 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
11
Typical Applications
This amplifier is ideal for use as a power
amplifier for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS
Features
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC414MS8G & HMC414MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 2.2 and 2.8 GHz. The amplifier is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal per-
formance. With a minimum of external components,
the amplifier provides 20 dB of gain, +30 dBm of satu-
rated power at 32% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
11 - 58
Electrical Specifications, T_A = +25° C, As a Function of Vs, Vpd = 3.6V
Parameter
Vs = 3.6V
Min.
Typ.
Max. Min.
Vs = 5V
Typ.
Frequency Range
2.2 - 2.8
2.2 - 2.8
Gain
17
20
25
17
20
Gain Variation Over Temperature
0.03
0.04
0.03
Input Return Loss
8
8
Output Return Loss
9
9
Output Power for 1 dB Compression (P1dB)
21
25
23
27
Saturated Output Power (Psat)
27
30
Output Third Order Intercept (IP3)
30
35
35
39
Noise Figure
6.5
7.0
Supply Current (Icq)
Vpd = 0V / 3.6V
0.002 / 240
0.002 / 300
Control Current (Ipd)
Vpd = 3.6V
7
7
Switching Speed
tON, tOFF
45
45
Max.
25
0.04
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com