HMC232LP4_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12 GHz

v04.0110
Typical Applications
The HMC232LP4(E) is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation
Functional Diagram
11
HMC232LP4 / 232LP4E
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 12 GHz
Features
Isolation: 60 dB @ 3 GHz
52 dB @ 6 GHz
Input P1dB: +27 dBm
Insertion Loss: 1.5 dB Typical @ 6 GHz
Non-Reflective Design
24 Lead 4x4mm QFN Package: 16mm2
Included in the HMC-DK005 Designer’s Kit
General Description
The HMC232LP4(E) is a broadband high isolation
non-reflective GaAs MESFET SPDT switch in a low
cost leadless QFN surface mount plastic package.
Covering DC to 12 GHz, the switch features >60
dB isolation up to 3 GHz and >42 dB isolation up to
12 GHz. Input P1dB compression is +27 dBm typ-
ical, while input IP3 is +50 dBm. The switch operates
using complementary negative control voltage logic
lines of -5/0V and requires no bias supply.
11 - 54
Electrical Specifications, T_A = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Insertion Loss
DC - 3.0 GHz
DC - 6.0 GHz
DC - 9.0 GHz
DC - 12.0 GHz
1.4
1.7
1.5
1.8
2.0
2.3
2.7
3.1
Isolation
DC - 3.0 GHz
55
60
DC - 6.0 GHz
47
52
DC - 9.0 GHz
40
45
DC - 12.0 GHz
37
42
Return Loss
DC - 6.0 GHz
18
“On State”
DC - 9.0 GHz
16
DC - 12.0 GHz
11
Return Loss RF1, RF2
“Off State”
DC - 12.0 GHz
14
Input Power for 1 dB Compression
0.5 - 12.0 GHz
24
27
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 12.0 GHz
45
50
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 12.0 GHz
3
6
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com