HMC-XTB110 Datasheet, PDF (1/4 Pages) Hittite Microwave Corporation – GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT

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Typical Applications
2
This HMC-XTB110 is ideal for:
• FCC E-Band Communication Systems
• Short-Haul / High Capacity Radios
• Automotive Radar
• Test & Measurement Equipment
HMC-XTB110
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Features
Conversion Loss: 19 dB
Input Drive: +13 dBm
Passive: No DC Bias Required
Die Size: 1.1 x 1.4 x 0.1 mm
Functional Diagram
General Description
The HMC-XTB110 is a monolithic X3 Passive Fre-
quency Multiplier which utilizes GaAs Shottky Diode
technology, and exhibits low conversion loss and high
Fo isolation. This wideband X3 multiplier requires
no DC power, and is targeted to high volume appli-
cations where frequency X3 of a lower frequency is
more economical than directly generating a higher
frequency. All bond pads and the die backside are
Ti/Au metallized and the Shottky diode devices are
fully passivated for reliable operation. The HMC-
XTB110 Passive X3 MMIC is compatible with
conventional die attach methods, as well as thermo-
compression and thermosonic wire bonding, making
it ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in a
50 Ohm environment and contacted with RF probes.
Electrical Specifications*, T_A = 25 °C, Pin = +13 dBm
Parameter
Min.
Frequency Range Input
Frequency Range Output
Conversion Loss
*Unless otherwise indicated, all measurements are from probed die
Typ.
24 - 30
72 - 90
19
Max.
Units
GHz
GHz
dB
2 - 76
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com