3SK298 Datasheet, PDF (9/11 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

S Parameter (V_DS = 6 V, V_G2S = 3 V, I_D = 10 mA, Z_O = 50 )
Freq.
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
0.994
0.993
0.986
0.980
0.973
0.950
0.936
0.924
0.912
0.893
0.874
0.859
0.846
0.829
0.810
0.802
0.791
0.778
0.756
0.751
ANG.
–5.8
–11.0
–16.8
–22.5
–27.8
–33.0
–38.3
–43.4
–48.0
–52.5
–57.3
–62.0
–66.1
–69.8
–74.2
–78.0
–81.6
–84.6
–88.5
–92.2
S21
MAG.
2.04
2.02
2.00
1.98
1.94
1.90
1.86
1.83
1.77
1.71
1.67
1.64
1.58
1.50
1.46
1.44
1.38
1.34
1.30
1.26
ANG.
173.6
167.4
161.5
155.5
149.6
142.6
137.1
131.6
126.8
121.0
115.5
111.1
106.7
102.1
97.1
92.7
88.9
84.2
80.2
75.9
S12
MAG.
0.00116
0.00132
0.00229
0.00313
0.00427
0.00473
0.00536
0.00561
0.00562
0.00640
0.00638
0.00647
0.00667
0.00694
0.00661
0.00618
0.00622
0.00615
0.00576
0.00562
ANG.
76.9
85.7
78.2
73.5
68.7
63.9
64.3
64.5
60.9
53.5
49.3
49.0
50.2
49.3
46.6
43.7
44.7
43.6
45.1
40.7
3SK298
S22
MAG.
0.993
0.993
0.991
0.990
0.987
0.985
0.982
0.979
0.975
0.971
0.967
0.964
0.960
0.955
0.952
0.948
0.944
0.940
0.935
0.932
ANG.
–2.2
–4.5
–6.4
–8.5
–10.5
–12.5
–14.4
–16.2
–18.2
–20.2
–22.0
–23.9
–25.8
–27.6
–29.4
–31.2
–33.2
–35.1
–36.8
–38.5
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