3SK298 Datasheet, PDF (1/11 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK298
Silicon N-Channel Dual Gate MOS FET
Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-390
1st. Edition