2SK2927 Datasheet, PDF (8/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2927
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
q _{ch – c(t) =} g _{s (t) •} q _{ch – c}
q _{ch – c = 4.17 °C/W, Tc = 25 °C}
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50W
VDD
= 30 V
Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
8