English
Language : 

2SK2927 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching
2SK2927
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.055 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
ADE-208-550D (Z)
5th. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain(Flange
3. Source