J2081535_H5N2509P Datasheet, PDF (7/11 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOSFET SWITCHING

1000
500
࠰࡯ࠬ࡮࠼࡟ࠗࡦ㑆
࠳ࠗࠝ࡯࠼ㅒᣇะ࿁ᓳᤨ㑆
200
100
50
20
10
0.1
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
0.3 1 3 10 30 100
ㅒ࠼࡟ࠗࡦ㔚ᵹ I _DR (A)
H5N2509P
ኈ㊂ኻ࠼࡟ࠗࡦ࡮࠰࡯ࠬ㔚࿶․ᕈ
50000
20000
10000
5000
VGS = 0
f = 1 MHz
Ciss
2000
1000
500
Coss
200
100
Crss
50
0
20
40 60 80 100
࠼࡟ࠗࡦ࡮࠰࡯ࠬ㔚࿶ V _DS (V)
౉ജ࠳ࠗ࠽ࡒ࠶ࠢ․ᕈ
500
20
I _D= 30 A
400
V _DD = 50 V
V_GS
16
100 V
300
200 V
12
V_DS
200
8
100
V _DD = 200 V
4
100 V
50 V
0
0
40 80 120 160 200
ࠥ࡯࠻࠴ࡖ࡯ࠫ㔚⩄㊂ Qg (nC)
10000
1000
ࠬࠗ࠶࠴ࡦࠣ․ᕈ
V_GS = 10 V, V _DD = 125 V
PW = 10 µs, duty ≤ 1 %
R_G=10 Ω
t _d(off)
100
tf
t _d(on)
tr
10
0.1 0.3 1 3 10 30 100
࠼࡟ࠗࡦ㔚ᵹ I _D (A)
5