J2081535_H5N2509P Datasheet, PDF (4/11 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOSFET SWITCHING

H5N2509P
ઈର࠷େఆ֨
߲໨
߸ه
υϨΠϯ · ιʔεిѹ
ήʔτ · ιʔεిѹ
υϨΠϯిྲྀ
ͤΜ಄υϨΠϯిྲྀ
ٯυϨΠϯిྲྀ
ͤΜ಄ٯυϨΠϯిྲྀ
ΞόϥϯγΣిྲྀ
ڐ༰νϟωϧଛࣦ
V_DSS
V_GSS
I_D
I ^஫1
D (pulse)
I_DR
I ^஫1
DR (pulse)
I_AP ^{஫ 3}
Pch ^{஫ 2}
νϟωϧɾέʔεؒ೤఍߅
θ ch-c
νϟωϧԹ౓
Tch
อଘԹ౓
Tstg
஫ʣ 1. PWʽ10µs, duty cycleʽ1%Ͱͷڐ༰஋
2. Tc = 25ˆʹ͓͚Δڐ༰஋
3. Tchʽ150ˆ
ఆ֨஋
250
±30
30
120
30
120
30
150
0.833
150
–55 to +150
(Ta = 25°C)
୯Ґ
V
V
A
A
A
A
A
W
°C/W
°C
°C
߲໨
υϨΠϯ · ιʔεഁյిѹ
υϨΠϯःஅిྲྀ
ήʔτःஅిྲྀ
ήʔτ · ιʔεःஅిѹ
υϨΠϯ · ιʔεΦϯ఍߅
ॱ఻ୡΞυϛλϯε
ೖྗ༰ྔ
ग़ྗ༰ྔ
ؐؼ༰ྔ
λʔϯ · Φϯ஗Ԇ࣌ؒ
্ঢ࣌ؒ
λʔϯ · Φϑ஗Ԇ࣌ؒ
Լ߱࣌ؒ
ήʔτνϟʔδྔ
ήʔτɾιʔενϟʔδྔ
ήʔτɾυϨΠϯνϟʔδྔ
μΠΦʔυॱిѹ
ٯճ෮࣌ؒ
ٯճ෮ిՙྔ
஫ʣ 4. ύϧεଌఆ
ؾితಛੑ
(Ta = 25°C)
߸هMin Typ Max ୯Ґ
ଌఆ৚݅
V_(BR)DSS 250
—
—
I_GSS
—
— ±0.1
I_DSS
—
—
1
V_GS(off)
3.0
—
4.0
R_DS(on)
— 0.053 0.069
|y_fs|
17
28
—
Ciss
— 3600 —
Coss — 450 —
Crss
—
115
—
V I_D = 10 mA, V_GS = 0
µA V_GS = ±30 V, V_DS = 0
µA V_DS = 250 V, V_GS = 0
V V_DS = 10 V, I_D = 1 mA
Ω I_D = 15 A, V_GS = 10 V ^{஫ 4}
S I_D = 15 A, V_DS = 10 V ^{஫ 4}
pF V_DS = 25 V
pF V_GS = 0
pF f = 1 MHz
td(on) —
48
—
tr
— 120 —
td(off) — 190 —
tf
— 110 —
ns I_D = 15 A
ns V_GS = 10 V
ns R_L = 8.3 Ω
ns Rg = 10 Ω
Qg
Qgs
Qgd
V_DF
trr
Qrr
— 110
—
nC V_DD = 200 V
—
19
—
nC V_GS = 10 V
—
53
—
nC I_D = 30 A
—
0.9 1.35
V I_F = 30 A, V_GS = 0
— 210 —
ns I_F = 30 A, V_GS = 0
—
1.8
—
µC diF/dt = 100 A/µs
2