BB301C Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Forward Transfer Admittance
vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 150 kΩ
16 f = 1 kHz
4V
3V
12
2V
8
4
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
BB301C
Power Gain vs. Gate Resistance
30
25
20
15
10
V_DS = 5 V
5
V_G1 = 5 V
V_G2S = 4 V
f = 200 MHz
0
10 20 50
100 200
500 1000
Gate Resistance R_G (kΩ)
Noise Figure vs. Gate Resistance
4
V_DS = 5 V
V_G1 = 5 V
3 ^VG2S ^{= 4 V}
f = 200 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance R_G (kΩ)
Power Gain vs. Drain Current
30
25
20
15
10 V_DS = 5 V
V_G1 = 5 V
5 ^{VG2S = 4 V}
R_G = variable
f = 200 MHz
0
5 10 15 20 25 30
Drain Current I_D (mA)
7