BB301C Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301C
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-507
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain