3SK297 Datasheet, PDF (7/11 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

Noise Figure vs. Drain to Source Voltage
5
4
3
2
1
V_G2S = 3 V
I _D = 10 mA
f = 900 MHz
0
2
4
6
8
10
Drain to source voltage V_DS (V)
3SK297
7