3SK297 Datasheet, PDF (5/11 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
V_DS = 6 V
f = 1 kHz
24
V _G2S = 3.0 V
18
2.5 V
12
2.0 V
1.5 V
6
1.0 V
0.5 V
0
0.4 0.8 1.2 1.6 ^2.0
Gate1 to source voltage V_G1S (V)
Noise Figure vs. Drain Current
3.0
V_DS = 6 V
V_G2S = 3 V
2.4
f = 200 MHz
1.8
1.2
0.6
0
1
2
5
10
20
Drain current I_D (mA)
3SK297
Power Gain vs. Drain Current
30
24
18
12
6
0
1
2
V_DS = 6 V
V_G2S = 3 V
f = 200 MHz
5
10
20
Drain current I _D (mA)
Power Gain vs. Drain to Source Voltage
30
24
18
12
6
V_G2S = 3 V
I _D = 10 mA
f = 200 MHz
0
2
4
6
8 10
Drain to source voltage V_DS (V)
5