2SK1153 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1153, 2SK1154
Reverse Drain Current vs.
Source to Drain Voltage
5
Pulse Test
4
3
2
1 _{5 V, 10 V}
V_GS=0, –10 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 ^{D = 1}
0.5
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03
01.0S1hot Pulse
0.01
10 µ
100 µ
T_C = 25°C
θch–c(t) = γ_S (t) · θch–c
θch–c = 4.17°C/W, T_C = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
R_L
50 Ω
Vin = 10 V
V_DD =^.. 30 V
Wavewforms
90 %
Vin 10 %
Vout 10 %
10 %
td _(on)
90 %
90 %
tr
td _(off)
tf
7