2SK1153 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
8
3A
4
2A
I_D = 1 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
5
V_GS = 10 V
4 Pulse Test
3A
3
2A
2
I_D = 1 A
1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1153, 2SK1154
Static Drain to Source on State
Resistance vs. Drain Current
50
20
Pulse Test
10
V_GS = 10 V
5
15 V
2
1.0
0.5
0.1 0.2
0.5 1.0 2
5 10
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 10 V
–25°C
2 ^{Pulse Test TC = 25°C}
1.0
75°C
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
5