PF0121 Datasheet, PDF (6/12 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for GSM Mobile Phone

PF0121
Note for Use
• Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm.
• It should not be existed any dust between module and heatsink.
• MODULE should be separated from PCB less than 1.5 mm.
Soldering temperature and soldering time should be less than 230°C, 10 sec.
(Soldering position spaced from the root point of the lead frame: 2 mm)
• Recommendation of thermal joint compounds is TYPE G746.
(Manufacturer: Shin-Etsu Chemical, Co., Ltd.)
• To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc.
should be grounded.
• Torque for screw up the heatsink flange should be 4 to 6 kg · cm with M3 screw bolts.
• Don't solder the flange directly.
• It should make the lead frame as straight as possible.
• The module should be screwed up before lead soldering.
• It should not be given mechanical and thermal stress to lead and flange of the module.
• When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics
should be evaluated enough.
• Don't washing the module except lead pins.
• To get good stability, ground impedance between the module GND flange and PCB GND pattern should
be designed as low as possible.
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