PF0121 Datasheet, PDF (1/12 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for GSM Mobile Phone

PF0121
MOS FET Power Amplifier Module for GSM Mobile Phone
Application
For GSM CLASS2 890 to 915 MHz
Features
• Low power control current: 0.9 mA Typ
• High speed switching: 1.5 µsec Typ
• Wide power control range: 100 dB Typ
Pin Arrangement
• RF-B2
2
5
1
ADE-208-097A (Z)
2nd Edition
July 1996
5
4
3
1: Pin
2: V_APC
3: V_DD
4: Pout
5: GND