2SK2939 Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2939(L),2SK2939(S)
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
V_GS = 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I _DR (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
200
100
50
Ciss
Coss
Crss
20 VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
100
20
I _D = 35 A
V _DD = 50 V
80
25 V 16
10 V
60 _VDS
12
V_GS
40
8
20
V _DD = 50 V
4
25 V
10 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
1000
300
100
30
Switching Characteristics
t _d(off)
tf
tr
10
t _d(on)
3
V_GS = 10 V, V _DD = 3 0 V
PW = 5 µs, duty < 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current I _D (A)
6