2SK2939 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2939(L),2SK2939(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS =0.020 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
ADE-208-562D (Z)
5th. Edition
Jun 1998
LDPAK
D
4
4
G
S
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain