2SK1773 Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1773
Body to Drain Diode Reverse
Recovry Time
5000
2000
1000
500
di / dt = 100 A / µs
200 VGS = 0, Ta =25°C
100
50
0.1 0.2
0.5
1
2
5 10
Reverse Drain Current I_DR (A)
10000
Typical Capacitance vs. Drain
to Source Voltage
Ciss
1000
Coss
100
V_GS = 0
f = 1 MHz
Crss
10
0
10
20
30
40
50
Drain to Source Voltage V_DS (V)
Dynamic Input Characteristics
1000
20
800
V_DS
600
400
V _GS
16
I_D= 5 A
12
V_DD = 250 V
400 V
8
600 V
V_DD = 600 V
200
4
400 V
250 V
0
0
40
80
120
160
200
Gate Charge Qg (nc)
Switching Characteristics
500
td (off)
200
tf
100
tr
50
td (on)
20
VGS = 10 V, VDD =.. 30 V
PW = 2 µs, duty < 1%
10
5
0.1 0.2
0.5 1
2
5
10
Drain Current I_D (A)
6