2SK1773 Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
5A
8
4
2A
I_D= 1 A
0
4
8
12
16
20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
10
8
Pulse Test
V_GS = 10 V
6
I_D= 5 A
4
2
2A _1A
0
–40
0
40
80
120
160
Case Temperature T_C (°C)
2SK1773
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
V_GS = 10 V
2
1
0.5
0.2
0.5 1
2
5 10 20
Drain Current I _D(A)
Forward Transfer Admittance
vs. Drain Current
10
5
Tc = – 25°C
2
25°C
75°C
1
0.5
0.2
V _DS = 10 V
Pulse Test
0.1
0.05 0.1 0.2
0.5 1
2
5
Drain Current I_D (A)
5