2SK1515 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1515, 2SK1516
5,000
Body to Drain Diode Reverse
Recovery Time
2,000
1,000
di/dt = 100 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
500
200
100
50
0.2 0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
400
V_DS
300
200
V_DD = 100 V
250 V
16
400 V
12
V_GS
8
100
V_DD = 400 V
I_D = 7 A 4
250 V
100 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
5,000
1,000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
Coss
Crss
10
5
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V
V_DD
=•
•
30
V
200 ^{PW = 2 µs, duty < 1%}
t_{d (off)}
100
50
t_f
20
10
5
0.2
t_r
t_{d (on)}
0.5 1 2
5 10 20
Drain Current I_D (A)
6