2SK1515 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1515, 2SK1516
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V _{7 V}
6V
16
Pulse Test
12
5V
8
4
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
50
20
PW
10
5
2
1
= _{10 ms (1 shot pulse)}
0.5
0.2
0.1 ^{Ta = 25°C}
2SK1515
2SK1516
0.05
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 20 V
Pulse Test
16
–25°C
Ta = 25°C
12
75°C
8
4
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4