2SK1303 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1303
5,000
2,000
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
500
200
100
50
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
80 V_DS
V_DD = 25 V
16
50 V
80 V
60
12
V_DD = 80 V
V_GS
40
8
20
4
50 V
I_D = 30 A
25 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
10,000
1,000
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
Switching Characteristics
t_{d (off)}
200
t_f
100
50
t_r
V_GS = 10 V, V_DD =.. 30 V
PW = 2 µs, duty < 1%
20
t_{d (on)}
10
0.5 1.0 2
5 10 20
50
Drain Current I_D (A)
6