2SK1303 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1303
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
50
10 V
5V
4V
7V
40
Pulse Test
3.5 V
30
20
3V
10
V_GS = 2.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
500
200
100
50
20
10
5
2
1.0
Opera^Dti^Con^OPpi^Wn^ert^a=h^ti1i^os⁰ⁿA^m(Tr^Cse¹⁽a^{=1002S51hµ°0osCtµ)) s}
is Limited by R_{DS (on)}
Ta = 25°C
0.5
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
75°C
10
T_C = 25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4