2SK1302 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1302
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
di/dt = 50 A/µs, Ta = 25°C
20
V_GS = 0
Pulse Test
10
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
V_DS
80
V_DD = 25 V
16
50 V
80 V
60
12
40
V_GS
8
20
V_DD = 80 V
50 V
25 V
I_D = 20 A
4
0
0
20 40 60 80 100
Gate Charge Qg (nc)
10000
1000
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
500
t_{d (off)}
200
100
50
20
10
0.5
t_f
t_r
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2µs, duty < 1 %
t_{d (on)}
1.0 2
5 10 20 50
Drain Current I_D (A)
6