2SK1302 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1302
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
50
10 V
7V
Pulse Test
5V
4V
40
30
3.5 V
20
3V
10
V_GS = 2.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
100
Ta = 25°C
30
10
1
100
ms
µ_s
3
1
0.3 Operation in this area
is limited by R_{DS (on)}
0.1
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
75°C
4
T_C = 25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4