2SK1301 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1301
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
V_GS = 0
200
Pulse Test
100
50
20
10
5
0.2 0.5 1.0 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
V_DD = 25 V
80
V_DS
50 V
80 V
V_GS
16
V_DD = 80 V
60
12
50 V
40
8
20
25 V
4
I_D = 15 A
0
0
20 40 60 80 100
Gate Charge Qg (nc)
10000
1000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
V_GS = 0
f = 1 MHz
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
t_{d (off)}
200
100
50
20
10
5
0.2
t_f
t_r
t_{d (on)}
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2µs, duty < 1 %
0.5 1 2
5 10 20
Drain Current I_D (A)
6