2SK1301 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.5
20 A
2.0
Pulse Test
1.5
10 A
1.0
I_D = 5 A
0.5
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
I_D = 20 A
Pulse Test
0.4
0.3
0.2
0.1
0
–40
V_GS = 4 V
10 A
5A
20 A
10 A
5A
V_GS = 10 V
0
40 80 120 160
Case Temperature T_C (°C)
2SK1301
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
V_GS = 4 V
10 V
0.1
0.05
0.02
Pulse Test
0.01
0.005
1
2
5 10 20 50 100
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
Pulse Test
20
10
–25°C
T_C = 25°C
75°C
5
2
1
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current I_D (A)
5