2SK1169 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1169, 2SK1170
5,000
Body to Drain Diode Reverse
Recovery Time
2,000
di/dt = 100 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
1,000
500
200
100
50
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
V_DD = 100 V
400
250 V
16
400 V
300
12
V_DS
V_GS
200
8
100
V _DD = 400 V
I_D = 20 A
4
250 V
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance
vs. Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
200
t_{d (off)}
100
t_f
50
t_r
t_{d (on)}
20
V_GS = 10 V
V_DD
=•
•
30
V
10 ^{PW = 2 µs, duty < 1%}
5
0.5 1.0 2
5 10 20
50
Drain Current I_D (A)
6