2SK1169 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1169, 2SK1170
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SK1169 V_(BR)DSS 450
breakdown voltage 2SK1170
500
Gate to source breakdown
voltage
V_(BR)GSS ±30
Gate to source leak current
I _GSS
—
Zero gate voltage 2SK1169 I_DSS
—
drain current
2SK1170
Gate to source cutoff voltage V_GS(off) 2.0
Static Drain to source 2SK1169 R_DS(on) —
on state resistance 2SK1170
—
Forward transfer admittance |yfs|
10
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward
V_DF
—
voltage
Body to drain diode reverse
t _rr
—
recovery time
Note: 1. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
250 µA
—
3.0
V
0.20 0.25 Ω
0.22 0.27
16
—
S
2800 —
pF
780 —
pF
90
—
pF
32
—
ns
115 —
ns
200 —
ns
90
—
ns
1.0
—
V
500 —
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 360 V, V_GS = 0
V_DS = 400 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 10 A, V_GS = 10 V *¹
I_D = 10 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 10 A, V_GS = 10 V,
R_L = 3 Ω
I_F = 20 A, V_GS = 0
I_F = 20 A, V_GS = 0,
di_F/dt = 100 A/µs
3