2SK1165 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1165, 2SK1166
5,000
2,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V_GS = 0 V
Pulse Test
1,000
500
200
100
50
0.2 0.5 1.0 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
V_DD = 100 V
250 V
400
V_DS
400 V
16
V_GS
300
12
200
8
I_D = 12 A
100
V_DD = 400 V
4
250 V
100 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
10,000
1,000
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1%
200
t_{d (off)}
100
t_r
50
t_f
t_{d (on)}
20
10
5
0.5 1.0 2
5 10 20
50
Drain Current I_D (A)
6