2SK1165 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1165, 2SK1166
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V
8V
6V
5.5 V
16
12
5.0 V
8
4.5 V
4
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
100
30
10
3
1.0
DC _{OPpWer=at1io0nm(1TsCm(1=s1s20h50o°}^{µ1Ct)0s) µs}
0.3
0.1
1
Ta = 25°C
2SK1166
2SK1165
3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
16
V_DS = 20 V
Pulse Test
12
8
75°C
4
–25°C
T_C = 25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4