2SJ186 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ186
1,000
500
200
Body to Drain Diode Reverse
Recovery Time
Pulse Test
Ta = 25°C
di/dt = 50 A/µs
V_GS = 0
100
50
20
10
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1
Reverse Drain Current I_DR (A)
1,000
100
10
Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
Crss
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
Dynamic Input Characteristics
0
0
V_DD
= –100 V
–150 V
–200
–200 V
–4
V_DS
V_DD = –200 V
–400
–150 V
–8
–200 V
–600
–800
–12
V_GS
I_D = –0.5 A
–16
–1,000
0
2
4
6
8
Gate Charge Qg (nc)
–20
10
Switching Characteristics
100
V_GS = 10 V
50 ^{PW = 2 µs}
dVu_Dt_Dy=..<–13%0V
20
t_f
t_{d (off)}
10
t_{d (on)}
5
t_r
2
1
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current I_D (A)