2SC5827 Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial VHF/UHF wide band amplifier

2SC5827
S₁₁ Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5
–10
–.2
–.4
–.6
–.8 _–1
–5
–4
–3
–2
–1.5
Test conditions: V_CE = 1 V , Z_O = 50 Ω
100 to 2000 MHz (100 MHz step)
(I_C = 5 mA)
(I_C = 20 mA)
S₂₁ Parameter vs. Frequency
90°
Scale: 8 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test conditions: V_CE = 1 V , Z_O = 50 Ω
100 to 2000 MHz (100 MHz step)
(I_C = 5 mA)
(I_C = 20 mA)
S₁₂ Parameter vs. Frequency
90°
Scale: 0.06 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test conditions: V_CE = 1 V , Z_O = 50 Ω
100 to 2000 MHz (100 MHz step)
(I_C = 5 mA)
(I_C = 20 mA)
S₂₂ Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5
–.2
–.4
–.6
–.8 _–1
–10
–5
–4
–3
–2
–1.5
Test conditions: V_CE = 1 V , Z_O = 50 Ω
100 to 2000 MHz (100 MHz step)
(I_C = 5 mA)
(I_C = 20 mA)
Rev.0, Nov. 2001, page 6 of 10