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| 2SC5827 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial VHF/UHF wide band amplifier | |||
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2SC5827
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
VEBO
IC
Pc
Tj
Tstg
Ratings
15
5.5
1.5
80
80
150
â55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25 °C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Symbol Min
V(BR)CBO
15
ICBO

ICEO

IEBO

hFE
100
Cob

fT
1.5
PG
10.5
Noise figure
NF

Typ




120
0.85
4.5
13.5
1.1
Max

0.1
1
0.1
150
1.15


1.8
Unit
V
µA
µA
µA

pF
GHz
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 15 V, IE = 0
VCE = 5.5 V, RBE = Infinite
VEB = 1.5 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA,
f = 900 MHz
V = 1 V, I = 5 mA,
CE
C
f = 900 MHz
Rev.0, Nov. 2001, page 2 of 10
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