HB288256C6 Datasheet, PDF (57/67 Pages) Hitachi Semiconductor – CompactFlash™

HB288256/192/160/128/096/064/032C6
Attribute Memory Write AC Characteristics
Parameter
Write cycle time
Write pulse time
Address setup time
Address setup time (-WE)
-CE setup time (-WE)
Data setup time (-WE)
Data hold time
Write recover time
Output disable time (-WE)
Output disable time (-OE)
Output enable time (-WE)
Output enable time (-OE)
Output enable setup time (-WE)
Output enable hold time (-WE)
-CE setup time
-CE hold time
250 ns
Symbol
Min
Typ
Max
Unit
tCW
250
—
—
ns
tw(WE)
150
—
—
ns
tsu(A)
30
—
—
ns
tsu(A-WEH) 180
—
—
ns
tsu(CE-WEH) 180
—
—
ns
tsu(D-WEH) 80
—
—
ns
th(D)
30
—
—
ns
trec(WE)
30
—
—
ns
tdis(WE)
—
—
100
ns
tdis(OE)
—
—
100
ns
ten(WE)
5
—
—
ns
ten(OE)
5
—
—
ns
tsu(OE-WE) 10
—
—
ns
th(OE-WE) 10
—
—
ns
tsu(CE)
0
—
—
ns
th(CE)
20
—
—
ns
Attribute Memory Write Timing
A0 to A10
-REG
-CE2/-CE1
-OE
-WE
D0 to D15(Din)
D0 to D15(Dout)
tCW
tsu(CE-WEH)
tsu(A-WEH)
tsu(CE)
th(CE)
tsu(A)
tsu(OE-WE)
tdis(OE)
tw(WE)
tsu(D-WEH)
Input Data
tdis(WE)
trec(WE)
th(OE-WE)
th(D)
ten(OE)
ten(WE)
-IOWR, -IORD : High Fix
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