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HB288256C6 Datasheet, PDF (52/67 Pages) Hitachi Semiconductor – CompactFlash™ | |||
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HB288256/192/160/128/096/064/032C6
DC Characteristics-1 (Ta = 0 to +60ËC, VCC = 5 V ± 10%, 3.3 V ± 5%)
Parameter
Symbol Min
Typ
Input leakage current ILI
â
â
Output voltage
VOL
â
â
VOH
VCC â 0.8 â
Note: 1. Except pulled up input pin.
Max
±1
0.4
â
Unit
µA
V
V
Test conditions
Vin = GND to VCC
IOL = 8 mA
IOH = â8 mA
Note
1
3.3 V
5V
Parameter
Symbol Min
Typ
Max Min
Typ
Max Unit Test conditions
Input voltage VIL
â
â
0.6
â
â
0.8
V
(CMOS)
VIH
2.4
â
â
4.0
â
â
V
Input voltage VIL
â
1.0
â
â
2.0
â
V
(Schmitt trigger)
VIH
â
1.8
â
â
2.8
â
V
DC Characteristics-2 (Ta = 0 to +60ËC, VCC = 5.0 V ± 10%)
32MB/64MB/
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128MB
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Parameter
Symbol Typ Max Typ Max Unit Test conditions
Sleep/standby
I SP1
current
0.5 1.0 0.7 1.5 mA CMOS level (control signal = VCC â 0.2 V)
(In Memory card mode and I/O card
mode)
Sector read current ICCR (DC) 40 75 40 75 mA CMOS level (control signal = VCC â 0.2 V)
during sector read transfer
ICCR (Peak) 80
Sector write current ICCW (DC) 45
120 80
75 45
120 mA
75 mA CMOS level (control signal = VCC â 0.2 V)
during sector write transfer
ICCW (Peak) 80 120 80 120 mA
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