HB28D096C6 Datasheet, PDF (53/68 Pages) Hitachi Semiconductor – CompactFlash™ 96 MByte/32 MByte

HB28D096/032C6
DC Characteristics-3 (Ta = 0 to +60˚C, V_CC = 3.3 V ± 5%)
Parameter
Sleep/standby
current
Symbol
I _SP1
32MB/96MB
Typ
Max
0.3
1.0
Sector read current I_CCR (DC) 25
50
I_CCR (Peak) 50
80
Sector write current I_CCW (DC) 25
50
I_CCW (Peak) 50
100
Unit Test conditions
mA CMOS level (control signal = V_CC – 0.2 V)
(In Memory card mode and I/O card
mode)
mA CMOS level (control signal = V_CC – 0.2 V)
during sector read transfer
mA
mA CMOS level (control signal = V_CC – 0.2 V)
during sector write transfer
mA
53