HB28D096C6 Datasheet, PDF (52/68 Pages) Hitachi Semiconductor – CompactFlash™ 96 MByte/32 MByte

HB28D096/032C6
DC Characteristics-1 (Ta = 0 to +60˚C, V_CC = 5 V ± 10%, 3.3 V ± 5%)
Parameter
Symbol Min
Typ
Input leakage current I_LI
—
—
Output voltage
V_OL
—
—
V_OH
V_CC – 0.8 —
Note: 1.
Except pulled up input pin.
Max
±1
0.4
—
Unit
µA
V
V
Test conditions
Vin = GND to V_CC
I_OL = 8 mA
I_OH = –8 mA
Note
1
3.3 V
5V
Parameter
Symbol Min
Typ
Max Min
Typ
Max Unit Test conditions
Input voltage V_IL
—
—
0.6
—
—
0.8
V
(CMOS)
V_IH
2.4
—
—
0.4
—
—
V
Input voltage V_IL
—
1.0
—
—
2.0
—
V
(Schmitt trigger)
V_IH
—
1.8
—
—
2.8
—
V
DC Characteristics-2 (Ta = 0 to +60˚C, V_CC = 5.0 V ± 10%)
Parameter
Sleep/standby
current
Symbol
I _SP1
32MB/96MB
Typ
Max
0.5
1.0
Sector read current I_CCR (DC) 40
75
I_CCR (Peak) 80
120
Sector write current I_CCW (DC) 45
75
I_CCW (Peak) 80
120
Unit Test conditions
mA CMOS level (control signal = V_CC – 0.2 V)
(In Memory card mode and I/O card
mode)
mA CMOS level (control signal = V_CC – 0.2 V)
during sector read transfer
mA
mA CMOS level (control signal = V_CC – 0.2 V)
during sector write transfer
mA
52