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| HB288256C5 Datasheet, PDF (53/67 Pages) Hitachi Semiconductor – CompactFlash™ | |||
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HB288256/192/160/128/096/064/032C5
DC Characteristics-3 (Ta = 0 to +60ËC, VCC = 3.3 V ± 5%)
32MB/64MB/
96MB/
160MB/192
128MB
MB/256MB
Parameter
Symbol Typ Max Typ Max Unit Test conditions
Sleep/standby
I SP1
current
0.3 1.0 0.4 1.5 mA CMOS level (control signal = VCC â 0.2 V)
(In Memory card mode and I/O card
mode)
Sector read current ICCR (DC) 25 50 25 50 mA CMOS level (control signal = VCC â 0.2 V)
during sector read transfer
ICCR (Peak) 50 80 50 80 mA
Sector write current ICCW (DC) 25 50 25 50 mA CMOS level (control signal = VCC â 0.2 V)
during sector write transfer
ICCW (Peak) 50 100 50 100 mA
53
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