HB288256C5 Datasheet, PDF (52/67 Pages) Hitachi Semiconductor – CompactFlash™

HB288256/192/160/128/096/064/032C5
DC Characteristics-1 (Ta = 0 to +60˚C, V_CC = 5 V ± 10%, 3.3 V ± 5%)
Parameter
Symbol Min
Typ
Input leakage current I_LI
—
—
Output voltage
V_OL
—
—
V_OH
V_CC – 0.8 —
Note: 1. Except pulled up input pin.
Max
±1
0.4
—
Unit
µA
V
V
Test conditions
Vin = GND to V_CC
I_OL = 8 mA
I_OH = –8 mA
Note
1
3.3 V
5V
Parameter
Symbol Min
Typ
Max Min
Typ
Max Unit Test conditions
Input voltage V_IL
—
—
0.6
—
—
0.8
V
(CMOS)
V_IH
2.4
—
—
4.0
—
—
V
Input voltage V_IL
—
1.0
—
—
2.0
—
V
(Schmitt trigger)
V_IH
—
1.8
—
—
2.8
—
V
DC Characteristics-2 (Ta = 0 to +60˚C, V_CC = 5.0 V ± 10%)
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Parameter
Symbol Typ Max Typ Max Unit Test conditions
Sleep/standby
I _SP1
current
0.5 1.0 0.7 1.5 mA CMOS level (control signal = V_CC – 0.2 V)
(In Memory card mode and I/O card
mode)
Sector read current I_CCR (DC) 40 75 40 75 mA CMOS level (control signal = V_CC – 0.2 V)
during sector read transfer
I_CCR (Peak) 80
Sector write current I_CCW (DC) 45
120 80
75 45
120 mA
75 mA CMOS level (control signal = V_CC – 0.2 V)
during sector write transfer
I_CCW (Peak) 80 120 80 120 mA
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