HB2881000A5 Datasheet, PDF (52/66 Pages) Hitachi Semiconductor – FLASH ATA Card 1 GByte

HB2881000A5
DC Characteristics-3 (Ta = 0 to +60˚C, V_CC = 5.0 V ± 10%)
Parameter
Sleep/standby current
Sector read current
Sector write current
Symbol
I _SP1
1GB
Typ
1.0
I_CCR (DC) 40
I_CCR (Peak) 80
I_CCW (DC) 45
I_CCW (Peak) 80
Max
2.0
75
120
75
120
Unit Test conditions
mA CMOS level (control signal = V_CC – 0.2 V)
(In Memory card mode and I/O card
mode)
mA CMOS level (control signal = V_CC – 0.2 V)
during sector read transfer
mA
mA CMOS level (control signal = V_CC – 0.2 V)
during sector write transfer
mA
DC Characteristics-4 (Ta = 0 to +60˚C, V_CC = 3.3 V ± 5%)
Parameter
Sleep/standby current
Sector read current
Sector write current
Symbol
I _SP1
1GB
Typ
0.5
I_CCR (DC) 25
I_CCR (Peak) 50
I_CCW (DC) 25
I_CCW (Peak) 50
Max
2.0
50
80
50
100
Unit Test conditions
mA CMOS level (control signal = V_CC – 0.2 V)
(In Memory card mode and I/O card
mode)
mA CMOS level (control signal = V_CC – 0.2 V)
during sector read transfer
mA
mA CMOS level (control signal = V_CC – 0.2 V)
during sector write transfer
mA
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