HAT2042T Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2042T
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 20 A/µs
5
V_GS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I _DR (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
300
100
30
Ciss
Coss
Crss
10
0 10 20 30 40 50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
10
I _D = 5.0 A
40
30 _VDS
V _DD = 5 V
10 V
25 V
8
V_GS
6
20
4
10
V _DD = 25 V 2
10 V
5V
0
0
4
8 12 16 20
Gate Charge Qg (nc)
1000
500
Switching Characteristics
V_GS = 4 V, V _DD = 10 V
PW = 3 µs, duty < 1 %
200
t _d(off)
100
50
tf
tr
20
t _d(on)
10
0.1 0.2 0.5 1 2
5 10
Drain Current I _D (A)
5