HAT2042T Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Main Characteristics
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
HAT2042T
Maximum Safe Operation Area
100
10 µs
30
100 µs
10
3
1
0.3
Othpiseara^D_re^Ctioa^On^p_is^ei^rn^ationP(PWW=<¹₁^10N₀o^mm_ste)^ss₅
0.1 ^{limited by R DS(on)}
0.03 _{Ta = 25 °C}
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10
10V
Pulse Test
8
4V
1.5 V
6
4
2
V_GS = 1.0 V
0
1
2
3
4
5
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
10
8
6
–25°C
4
25°C
2
Tc = 75°C
V _DS = 10 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
3